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IXYS IXFN80N50Q2

Single N-Channel 500 V 60 mO 890 W Power Mosfet - SOT-227B

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
60 MΩ

Physical

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Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
80 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
60 mΩ
Fall Time
11 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
12.8 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
890 W
Rds On Max
60 mΩ
Resistance
60 MΩ
Rise Time
60 mΩ
Turn-Off Delay Time
60 ns

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