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IXYS IXFN80N50P

Single N-Channel 500 Vds 55 mOhm 780 W Power Mosfet - SOT-227B

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
55 MΩ

Dimensions

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Height
9.6 mm
Length
38.2 mm
Width
IBS

Physical

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Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
66 A
Current Rating
80 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
65 mΩ
Element Configuration
Single
Fall Time
18 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
12.7 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Packaging
Bulk
Power Dissipation
700 W
Rds On Max
65 mΩ
Resistance
55 MΩ
Rise Time
65 mΩ
Turn-Off Delay Time
70 ns
Turn-On Delay Time
27 ns
Voltage Rating (DC)
Compliant

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