Skip to main content

IXYS IXFN80N50

Single N-Channel 500 Vds 55 mOhm 780 W Power Mosfet - SOT-227B

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
55 mΩ

Physical

Select to search
related specs
Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4
Weight
36 mg

Technical

Select to search
related specs
Continuous Drain Current (ID)
80 A
Current Rating
80 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
55 mΩ
Drain to Source Voltage (Vdss)
55 mΩ
Dual Supply Voltage
500 V
Fall Time
27 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
9.89 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
4.5 V
Number of Elements
1
Packaging
Bulk
Power Dissipation
780 W
Rds On Max
55 mΩ
Recovery Time
250 ns
Resistance
55 mΩ
Reverse Recovery Time
250 ns
Rise Time
55 mΩ
Termination
Screw
Threshold Voltage
70 ns
Turn-Off Delay Time
102 ns
Voltage Rating (DC)
IBS

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us