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IXYS IXFN55N50

Single N-Channel 500 V 625 W 330 nC Chassis Mount Power Mosfet - SOT227B

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
SOT-227-4
Mount
Chassis Mount, Screw
Number of Pins
3
Weight
46 g

Technical

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Continuous Drain Current (ID)
55 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
90 mΩ
Drain to Source Voltage (Vdss)
500 V
Dual Supply Voltage
500 V
Element Configuration
Single
Fall Time
45 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
9.4 nF
Isolation Voltage
2.5 kV
Max Operating Temperature
150 °C
Max Power Dissipation
625 W
Min Operating Temperature
-55 °C
Nominal Vgs
4.5 V
Number of Elements
1
Power Dissipation
625 W
Rds On Max
90 mΩ
Recovery Time
250 ns
Resistance
80 mΩ
Rise Time
60 ns
Termination
Screw
Threshold Voltage
4.5 V
Turn-Off Delay Time
120 ns

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