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IXYS IXFN38N100P

Single N-Channel 1000 Vds 210 mOhm 1000 W Power Mosfet - SOT-227B

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
210 MΩ

Physical

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Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
38 A
Drain to Source Breakdown Voltage
1 kV
Drain to Source Resistance
210 mΩ
Drain to Source Voltage (Vdss)
210 mΩ
Fall Time
40 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
24 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1 kW
Rds On Max
210 mΩ
Resistance
210 MΩ
Rise Time
210 mΩ
Turn-Off Delay Time
71 ns

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