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IXYS IXFN210N20P

Single N-Channel 200 V 1070 W 255 nC Polar HyPerFET Mosfet - TO-227B

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
10.5 mΩ

Physical

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Case/Package
SOT-227-4
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
188 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
10.5 mΩ
Drain to Source Voltage (Vdss)
10.5 mΩ
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
18.6 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.07 kW
Rds On Max
12442526
Resistance
10.5 MΩ

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