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IXYS IXFM40N30

N-Channel Enhancement Mode HiPerFET Power MOSFET88mN HiPerFETMOSFET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Number of Pins
3

Technical

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Continuous Drain Current (ID)
40 A
Drain to Source Breakdown Voltage
300 V
Drain to Source Resistance
88 mΩ
Element Configuration
Single
Fall Time
45 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Power Dissipation
300 W
Rise Time
60 ns
Turn-Off Delay Time
75 ns

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