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IXYS IXFK80N50P

N-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-264
Mount
Through Hole
Number of Pins
3

Technical

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Continuous Drain Current (ID)
80 A
Current Rating
80 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
12.7 nF
Max Operating Temperature
150 °C
Max Power Dissipation
1.04 kW
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.04 kW
Rds On Max
65 mΩ
Resistance
65 MΩ
Rise Time
27 ns
Turn-Off Delay Time
70 ns
Voltage Rating (DC)
500 V

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