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IXYS IXFH6N100F

IXYS RF IXFH6N100F RF FET Transistor, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD

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Compliance

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REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Number of Pins
3

Technical

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Continuous Drain Current (ID)
6 A
Drain to Source Breakdown Voltage
1 kV
Drain to Source Resistance
1.9 Ω
Drain to Source Voltage (Vdss)
1 kV
Element Configuration
Single
Fall Time
8.3 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
180 W
Min Operating Temperature
-55 °C
Power Dissipation
180 W
Resistance
1.9 Ω
Rise Time
8.6 ns
Turn-Off Delay Time
31 ns

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