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IXYS IXFH60N50P3

Mosfet Transistor, N Channel, 60 A, 500 V, 0.1 Ohm, 10 V, 5 V Rohs Compliant: Yes

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
100 mΩ

Dimensions

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Height
21.46 mm
Length
16.26 mm
Width
5.3 mm

Physical

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Case/Package
TO-247
Mount
Through Hole
Number of Pins
3

Technical

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Continuous Drain Current (ID)
60 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
6.25 nF
Max Operating Temperature
150 °C
Max Power Dissipation
1.04 kW
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.04 kW
Rds On Max
100 mΩ
Rise Time
16 ns
Threshold Voltage
5 V
Turn-Off Delay Time
37 ns
Turn-On Delay Time
18 ns

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