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IXYS IXFH35N30

N-Channel Enhancement Mode HiPerFET Power MOSFET100mN HiPerFETMOSFET

Product Details

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Compliance

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RoHS
100 mΩ

Physical

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Case/Package
TO-247-3
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
35 A
Current Rating
35 A
Drain to Source Breakdown Voltage
300 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
100 mΩ
Element Configuration
Single
Fall Time
45 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.8 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Packaging
Bulk
Power Dissipation
300 W
Rds On Max
100 mΩ
Rise Time
60 ns
Turn-Off Delay Time
75 ns
Voltage Rating (DC)
300 V

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