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IXYS IXFH120N20P

IXYS SEMICONDUCTOR IXFH120N20P MOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
22 mΩ
RoHS
Compliant

Dimensions

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Height
21.46 mm
Length
16.26 mm
Width
5.3 mm

Physical

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Case/Package
TO-247
Mount
Through Hole
Number of Pins
3

Technical

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Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
22 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
31 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6 nF
Max Operating Temperature
175 °C
Max Power Dissipation
714 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
714 W
Rds On Max
22 mΩ
Resistance
22 MΩ
Rise Time
35 ns
Threshold Voltage
5 V
Turn-Off Delay Time
100 ns
Turn-On Delay Time
30 ns

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