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IXYS IXFB30N120P

N-Channel 1200 V 30 A 350 mO Through Hole PolarP HiPerFET Power Mosfet- PLUS-264

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
350 mΩ

Physical

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Case/Package
TO-264-3
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
30 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
350 mΩ
Drain to Source Voltage (Vdss)
350 mΩ
Element Configuration
Single
Fall Time
56 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
22.5 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.25 kW
Rds On Max
350 mΩ
Rise Time
60 ns
Turn-Off Delay Time
95 ns

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