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IXYS IXFA3N120

N-Channel 1200 V 4.5 Ohm SMT HiPerFET Power Mosfet - TO-263-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
4.5 Ω

Physical

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Case/Package
TO-263
Mount
-55 °C

Technical

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Continuous Drain Current (ID)
3:00 AM
Drain to Source Breakdown Voltage
3 A
Drain to Source Resistance
4.5 Ω
Drain to Source Voltage (Vdss)
4.5 Ω
Element Configuration
Single
Fall Time
18 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.05 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
200 W
Rds On Max
4.5 Ω
Rise Time
15 ns
Turn-Off Delay Time
32 ns

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