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Infineon FF45MR12W1M1B11BOMA1

Transistor Silicon Carbide MOSFET Array Module Dual N-CH 1200V AG-Easy1BM Tray

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Dimensions

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Height
12.35 mm

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
25 A
Drain to Source Resistance
45 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
20 V
Manufacturer Package Identifier
AG-EASY1BM-2
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
2
Package Quantity
24
Power Dissipation
20 mW
Turn-Off Delay Time
35.2 ns
Turn-On Delay Time
8.2 ns

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