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Infineon FF450R12KE4HOSA1

IGBT Array & Module Transistor, Dual NPN, 520 A, 1.75 V, 2.4 kW, 1.2 kV, Module

Product Details

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Compliance

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Halogen Free
Not Halogen Free
Lead Free
Lead Free
RoHS
Non-Compliant

Physical

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Number of Pins
-40 °C

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Saturation Voltage
1.75 V
Collector Emitter Voltage (VCEO)
1.2 kV
Continuous Collector Current
520 A
Element Configuration
Dual
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Package Quantity
10
Polarity
NPN
Power Dissipation
2.4 kW
Turn-Off Delay Time
500 ns
Turn-On Delay Time
200 ns

Compliance Documents

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