Skip to main content

Infineon F3L11MR12W2M1B74BOMA1

Transistor Silicon Carbide MOSFET Array Module Hexa N-CH 1200V AG-Easy2BM Tray

Product Details

Find similar products  

Dimensions

Select to search
related specs
Height
12.35 mm

Technical

Select to search
related specs
Continuous Drain Current (ID)
100 A
Drain to Source Resistance
11.3 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
2
Turn-Off Delay Time
84.2 ns
Turn-On Delay Time
45.1 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us