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Infineon F3L11MR12W2M1B65BOMA1

Transistor Silicon Carbide MOSFET Array Module Hexa N-CH 1200V AG-Easy2BM Tray

Product Details

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Dimensions

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Height
12.6 mm

Technical

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related specs
Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
11.3 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
2
Power Dissipation
20 mW
Turn-Off Delay Time
82.9 ns
Turn-On Delay Time
26.7 ns

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