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Infineon BSZ096N10LS5ATMA1

OptiMOS 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TSDSON-8, RoHS

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Compliance

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RoHS
Non-Compliant

Dimensions

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Height
1 mm

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
62 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
8.2 mΩ
Drain to Source Voltage (Vdss)
100 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.6 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
9.6 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
69 W
Turn-Off Delay Time
21 ns
Turn-On Delay Time
5.7 ns

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