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Infineon BSZ011NE2LS5IATMA1

Power Transistor MOSFET N-Channel Enhancement 25V 40A 8-Pin TSDSON

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Dimensions

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Height
1 mm

Technical

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Continuous Drain Current (ID)
35 A
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
820 µΩ
Drain to Source Voltage (Vdss)
820 µΩ
Gate to Source Voltage (Vgs)
16 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-55 °C
Power Dissipation
2.1 W
Turn-Off Delay Time
26 ns
Turn-On Delay Time
5 ns

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