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Infineon BSP149H6327XTSA1

Mosfet Transistor, N Channel, 660 Ma, 200 V, 1 Ohm, 10 V, -1.4 V Rohs Compliant: Yes

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SOT-223
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
660 mA
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
1 Ω
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
21 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
326 pF
Max Dual Supply Voltage
200 V
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
1.8 Ω
Package Quantity
1000
Packaging
Tape & Reel
Power Dissipation
1.8 W
Rds On Max
1.8 Ω
Rise Time
3.4 ns
Turn-Off Delay Time
45 ns
Turn-On Delay Time
5.1 ns

Compliance Documents

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