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Infineon BSC046N10NS3GATMA1

N-Channel 100 V 4.6 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
4.6 mΩ
Drain to Source Voltage (Vdss)
100 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.5 nF
Max Dual Supply Voltage
100 V
Max Operating Temperature
150 °C
Max Power Dissipation
156 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
4.6 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
156 W
Rds On Max
4.6 mΩ
Rise Time
14 ns

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