Skip to main content

Infineon BFP420H6327XTSA1

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, NPN

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1 mm

Physical

Select to search
related specs
Case/Package
SOT
Mount
Surface Mount
Number of Pins
4

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
5 V
Collector Emitter Voltage (VCEO)
4.5 V
Emitter Base Voltage (VEBO)
1.5 V
Frequency
25 GHz
Gain
21 dB
hFE Min
60
Max Breakdown Voltage
5 V
Max Collector Current
35 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
160 mW
Min Operating Temperature
-65 °C
Noise Figure
1.1 dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
210 mW
Power Gain
21 dB
Termination
SMD/SMT
Test Frequency
1.8 GHz
Transition Frequency
25 GHz

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us