Skip to main content

Infineon BCX71GE6327HTSA1

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Select to search
related specs
Case/Package
SOT
Contact Plating
45 V
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Supply Chain

Select to search
related specs
Lifecycle Status
NRND

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
45 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
-550 mV
Collector Emitter Voltage (VCEO)
550 mV
Continuous Collector Current
100 mA
Current Rating
-100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
hFE Min
120
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
330 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
-45 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us