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Infineon BC850BE6327

Bipolar Gen Purpose Transistor

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
900 µm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
250 MHz
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Frequency
250 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Polarity
NPN
Transition Frequency
250 MHz

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