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Infineon AUIRLS4030

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
5.084 mm
Length
10.67 mm
Width
9.65 mm

Physical

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Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
180 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.6 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
170 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
11.36 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
370 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
4.3 mΩ
Package Quantity
1000
Packaging
Tape & Reel (TR)
Power Dissipation
370 W
Rds On Max
4.3 mΩ
Rise Time
330 ns
Turn-Off Delay Time
110 ns
Turn-On Delay Time
74 ns

Compliance Documents

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