Skip to main content

Infineon AUIRFZ44ZS

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

Product Details

Find similar products  

Compliance

Select to search
related specs
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
13.9 mΩ

Dimensions

Select to search
related specs
Height
4.83 mm
Length
10.67 mm
Width
11.3 mm

Physical

Select to search
related specs
Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
51 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
13.9 mΩ
Drain to Source Voltage (Vdss)
55 V
Element Configuration
Single
Fall Time
41 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.42 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
80 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
13.9 mΩ
Package Quantity
13.9 mΩ
Power Dissipation
1000
Rds On Max
13.9 mΩ
Rise Time
68 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us