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Infineon AUIRFS4127TRL

Automotive Q101 200V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-263-3

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
72 A
Drain to Source Voltage (Vdss)
200 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.38 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
On-State Resistance
-55 °C
Package Quantity
22 mΩ
Power Dissipation
375 W
Rds On Max
800

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