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Infineon AUIRFS3306TRL

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

Product Details

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Compliance

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Radiation Hardening
No
RoHS
4.2 mΩ

Physical

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Case/Package
D2PAK
Mount
-55 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
160 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
4.2 mΩ
Drain to Source Voltage (Vdss)
4.2 mΩ
Fall Time
77 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.52 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
4.2 mΩ
Package Quantity
4.2 mΩ
Packaging
Tape & Reel (TR)
Power Dissipation
800
Rds On Max
4.2 mΩ
Rise Time
76 ns
Turn-Off Delay Time
40 ns
Turn-On Delay Time
15 ns

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