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Infineon AUIRFR9024NTRL

Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Product Details

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Compliance

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Radiation Hardening
No
RoHS
175 mΩ

Physical

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Case/Package
TO-252-3
Mount
-55 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-11 A
Drain to Source Breakdown Voltage
-55 V
Drain to Source Resistance
175 mΩ
Drain to Source Voltage (Vdss)
175 mΩ
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
350 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
175 mΩ
Package Quantity
175 mΩ
Packaging
Tape & Reel (TR)
Power Dissipation
3000
Rds On Max
175 mΩ
Rise Time
55 ns
Turn-Off Delay Time
23 ns
Turn-On Delay Time
Compliant

Compliance Documents

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