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Infineon AUIRFR4105Z

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
24.5 MΩ

Dimensions

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Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
30 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
24.5 mΩ
Drain to Source Voltage (Vdss)
55 V
Element Configuration
Single
Fall Time
24 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
740 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
48 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
24.5 mΩ
Package Quantity
24.5 mΩ
Power Dissipation
3000
Rds On Max
24.5 mΩ
Resistance
24.5 MΩ
Rise Time
24.5 mΩ
Threshold Voltage
Compliant
Turn-Off Delay Time
26 ns
Turn-On Delay Time
IBS

Compliance Documents

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