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Infineon AUIRFR2905Z

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.52 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
42 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
11.1 mΩ
Drain to Source Voltage (Vdss)
55 V
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.38 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
110 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
14.5 mΩ
Package Quantity
3000
Power Dissipation
110 W
Rds On Max
14.5 mΩ
Rise Time
66 ns
Threshold Voltage
2 V
Turn-Off Delay Time
31 ns
Turn-On Delay Time
14 ns

Compliance Documents

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