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Home Products Discrete Semiconductors Transistors MOSFETs AUIRFP064N

Infineon AUIRFP064N

AUIRFP064N Series 55 V 110 A 0.008 Ohm HEXFET Power MOSFET - TO-247AC
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Compliance

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Radiation Hardening
400
REACH SVHC
No SVHC
RoHS
8 mΩ

Dimensions

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Height
20.7 mm
Length
15.87 mm
Width
IBS

Physical

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Case/Package
TO-247-3
Mount
-55 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
110 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
8 mΩ
Element Configuration
Single
Fall Time
70 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
24.99 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
8 mΩ
Package Quantity
8 mΩ
Power Dissipation
200 W
Rds On Max
8 mΩ
Rise Time
100 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14 ns

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