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Infineon AUIRF3710ZS

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
5.084 mm
Length
10.67 mm
Width
11.3 mm

Physical

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Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
59 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
14 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
56 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.9 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
160 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
On-State Resistance
18 mΩ
Package Quantity
1000
Power Dissipation
160 W
Rds On Max
18 mΩ
Rise Time
77 ns
Threshold Voltage
2 V
Turn-Off Delay Time
41 ns
Turn-On Delay Time
17 ns

Compliance Documents

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