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Infineon AUIRF3205

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
19.8 mm
Length
10.67 mm
Width
4.83 mm

Physical

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Case/Package
TO-220AB
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
75 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
55 V
Element Configuration
Single
Fall Time
65 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.247 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
200 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
8 mΩ
Package Quantity
1000
Power Dissipation
200 W
Rds On Max
8 mΩ
Rise Time
101 ns
Threshold Voltage
2 V
Turn-Off Delay Time
50 ns
Turn-On Delay Time
14 ns

Compliance Documents

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