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Infineon AUIRF1324

Automotive Q101 24V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

Product Details

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Compliance

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Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
1.5 mΩ

Dimensions

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Height
16.51 mm
Length
10.6426 mm
Width
IBS

Physical

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Case/Package
TO-220AB
Mount
-55 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
195 A
Drain to Source Breakdown Voltage
24 V
Drain to Source Resistance
1.2 mΩ
Drain to Source Voltage (Vdss)
1.2 mΩ
Element Configuration
Single
Fall Time
120 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
22.86 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1.5 mΩ
Package Quantity
1.5 mΩ
Power Dissipation
300 W
Rds On Max
1.5 mΩ
Rise Time
190 ns
Threshold Voltage
2 V
Turn-Off Delay Time
83 ns
Turn-On Delay Time
Compliant

Compliance Documents

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