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Infineon AIGB50N65H5ATMA1

Transistor, Igbt, 650V, 80A, To-263 Rohs Compliant: Yes

Product Details

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Dimensions

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Height
4.7 mm

Technical

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Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.65 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
80 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-40 °C
Power Dissipation
305 W
Turn-Off Delay Time
163 ns
Turn-On Delay Time
22 ns

Compliance Documents

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