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Infineon 2ED2109S06FXUMA1

650 V Half Bridge Gate Driver With Integrated Bootstrap Diode

Product Details

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Dimensions

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Height
1.72 mm

Technical

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Ambient Temperature Range High
125 °C
Fall Time
35 ns
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
125 °C
Max Power Dissipation
625 mW
Max Supply Voltage
20 V
Min Operating Temperature
-40 °C
Min Supply Voltage
10 V
Number of Channels
2
Number of Drivers
1
Number of Outputs
1
Output Current
290 mA
Output Voltage
650 V
Rise Time
100 ns
Turn-Off Delay Time
200 ns
Turn-On Delay Time
740 ns

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