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GeneSiC Semiconductor GB01SLT12-252

Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon Carbide, TO-252

Product Details

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Compliance

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REACH SVHC
Yes
RoHS
Compliant

Dimensions

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Height
2.507 mm

Physical

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Case/Package
TO-252-2
Mount
Surface Mount
Number of Pins
2

Supply Chain

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Lifecycle Status
Production

Technical

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Average Rectified Current
1 A
Capacitance
61 pF
Current Rating
1 A
Element Configuration
Single
Forward Current
4 A
Max Forward Surge Current (Ifsm)
10 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
42 W
Max Repetitive Reverse Voltage (Vrrm)
1.2 kV
Max Reverse Leakage Current
4 µA
Max Reverse Voltage (DC)
1.2 kV
Max Surge Current
10 A
Min Operating Temperature
-55 °C
Peak Reverse Current
1 µA
Recovery Time
17 ns
Reverse Recovery Time
0 s

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