GaN Systems GS66516T-E02-MR

Name: GS66516T-E02-MR
Availability: OutOfStock

Gan Power Transistor

Product Details

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RoHS

Non-Compliant

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Height

580 µm

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Continuous Drain Current (ID)

60 A

Drain to Source Breakdown Voltage

650 V

Drain to Source Resistance

25 mΩ

Drain to Source Voltage (Vdss)

650 V

Gate to Source Voltage (Vgs)

7 V

Manufacturer Package Identifier

GS66516T-E02-MR

Max Junction Temperature (Tj)

150 °C

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

Number of Channels

1

Threshold Voltage

1.3 V

Turn-Off Delay Time

14.9 ns

Turn-On Delay Time

4.6 ns

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