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Everlight ITR8105

Infrared Emitting Diode and an NPN Silicon Phototransistor

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Mount
-25 °C

Technical

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Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage (VCEO)
30 V
Fall Time
20 µs
Forward Current
20 µs
Max Collector Current
20 mA
Max Operating Temperature
85 °C
Min Operating Temperature
85 °C
Number of Elements
1
Power Dissipation
75 mW
Response Time
20 µs
Reverse Breakdown Voltage
5 V
Rise Time
20 µs
Sensing Distance
20 µs
Wavelength
20 µs

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