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EPC EPC2016C

Power Field-Effect Transistor, 18A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide...

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Compliance

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RoHS
57061648

Dimensions

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Height
815 µm

Physical

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Mount
-40 °C

Technical

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Continuous Drain Current (ID)
18 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
12 mΩ
Drain to Source Voltage (Vdss)
12 mΩ
Gate to Source Voltage (Vgs)
6 V
Input Capacitance
815 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
1
Rds On Max
16 mΩ

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