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Diodes Inc. DMN6066SSS-13

60V N-Channel Enhancement MOSFET SOIC8

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

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Case/Package
SO
Mount
Surface Mount
Number of Pins
8
Weight
73.992255 mg

Technical

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Continuous Drain Current (ID)
3.7 A
Drain to Source Resistance
48 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Dual
Fall Time
5.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
502 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.56 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
1
Packaging
Tape and Reel
Rds On Max
66 mΩ
Rise Time
2.4 ns
Turn-Off Delay Time
14.7 ns
Turn-On Delay Time
2.7 ns

Compliance Documents

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