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Diodes Inc. DMN2005LP4K-7

Single N-Channel 20 V 1.5 Ohm Enhancement Mode Transistor-DFN-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
1.5 Ω

Dimensions

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Height
350 µm
Length
1 mm
Width
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080

Physical

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Case/Package
DFN
Contact Plating
Gold
Mount
-65 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
650 mΩ
Drain to Source Voltage (Vdss)
650 mΩ
Element Configuration
Single
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
350 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
200 mW
Rds On Max
1.5 Ω
Resistance
1.5 Ω
Turn-Off Delay Time
13.7 ns
Turn-On Delay Time
Compliant

Compliance Documents

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