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Diodes Inc. BSS8402DW-7-F

Transistor: P-MOSFET, unipolar, -60V, -115mA, 13.5ohm, 200mW, -55+150 deg.C, SMD, SOT363(SC8

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
7.5 Ω

Dimensions

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Height
1.1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
6.010099 mg

Technical

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Continuous Drain Current (ID)
115 mA
Current Rating
115 mA
Drain to Source Resistance
4.4 Ω
Drain to Source Voltage (Vdss)
-50 V
Dual Supply Voltage
60 V
Element Configuration
Dual
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Nominal Vgs
2.5 V
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
200 mW
Rds On Max
7.5 Ω
Resistance
10 Ω
Termination
Compliant
Threshold Voltage
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Turn-Off Delay Time
IBS
Turn-On Delay Time
10 ns

Compliance Documents

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