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Diodes Inc. BSS138DW-7

Transistor - FET Dual N-Channel 50V 200mW

Product Details

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Compliance

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Lead Free
Contains Lead
REACH SVHC
No SVHC
RoHS
Non-Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-363
Mount
Surface Mount
Number of Pins
6
Weight
20 ns

Technical

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Continuous Drain Current (ID)
200 mA
Current Rating
200 mA
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
1.4 Ω
Drain to Source Voltage (Vdss)
50 V
Element Configuration
Dual
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
50 pF
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Packaging
Cut Tape
Power Dissipation
200 mW
Rds On Max
3.5 Ω
Turn-Off Delay Time
3.5 Ω
Turn-On Delay Time
20 ns
Voltage Rating (DC)
IBS

Compliance Documents

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