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Diodes Inc. BCP5216TA

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.65 mm
Length
6.55 mm
Width
IBS

Physical

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Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
4
Weight
7.994566 mg

Technical

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Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-500 mV
Collector Emitter Voltage (VCEO)
-60 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
150 MHz
Gain Bandwidth Product
125 MHz
hFE Min
1.8 mm
Max Breakdown Voltage
60 V
Max Collector Current
-1 A
Max Frequency
150 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
2 W
Transition Frequency
150 MHz

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