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Home Products Discrete Semiconductors Transistors BJTs BC857CT-7-F

Diodes Inc. BC857CT-7-F

DIODES INC. - BC857CT-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
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Compliance

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Lead Free
750 µm
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
750 µm
Length
1.6 mm
Width
IBS

Physical

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Case/Package
SOT-523
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
2.012816 mg

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
PNP
Power Dissipation
150 mW
Transition Frequency
100 MHz

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