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Diodes Inc. BC857BS-7-F

DIODES INC. - BC857BS-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 220 hFE

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
6.010099 mg

Technical

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Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
-45 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
100 MHz
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Operating Temperature
125 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
200 mW
Transition Frequency
100 MHz

Compliance Documents

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