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Diodes Inc. BC856AS-7

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
IBS

Physical

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Case/Package
SOT-363
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
6.010099 mg

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-250 mV
Collector Emitter Voltage (VCEO)
65 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
125
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Polarity
PNP
Power Dissipation
200 mW
Transition Frequency
100 MHz

Compliance Documents

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